IDT70V9369L
High-Speed 3.3V 16K x 18 Dual-Port Synchronous Pipelined Static RAM
Truth Table II—Address Counter Control (1,2,6)
Industrial and Commercial Temperature Ranges
Previous
Internal
L
L
Address
An
X
X
X
Internal
Address
X
An
An + 1
X
Address
Used
An
An + 1
An + 1
A 0
CLK (6 )
ADS
L (4)
H
H
X
CNTEN
X
(5)
H
X
CNTRST
H
H
H
(4)
I/O (3)
D I/O (n)
D I/O (n+1)
D I/O (n+1)
D I/O (0)
MODE
External Address Used
Counter Enabled —Internal Address generation
External Address Blocked —Counter disabled (An + 1 reused)
Counter Reset to Address 0
NOTES:
1. "H" = V IH, "L" = V IL, "X" = Don't Care.
2. CE 0 , LB , UB , and OE = V IL ; CE 1 and R/ W = V IH .
3. Outputs configured in Flow-Through Output mode; if outputs are in Pipelined mode the data out will be delayed by one cycle.
4. ADS and CNTRST are independent of all other signals including CE 0 , CE 1 , UB and LB .
5. The address counter advances if CNTEN = V IL on the rising edge of CLK, regardless of all other signals including CE 0 , CE 1 , UB and LB .
6. While an external address is being loaded ( ADS = V IL ), R/ W = V IH is recommended to ensure data is not written arbitrarily.
5648 tbl 03
Recommended Operating
Temperature and Supply Voltage (1)
Recommended DC Operating
Conditions
Grade
Commercial
Ambient
Temperature (1)
0 O C to +70 O C
GND
0V
V DD
3.3V + 0.3V
Symbol
V DD
Vss
Parameter
Supply Voltage
Ground
Min.
3.0
0
Typ.
3.3
0
Max.
3.6
0
Unit
V
V
Industrial
-40 O C to +85 O C
0V
3.3V + 0.3V
V IH
Input High Voltage
2.0V
____
V DD +0.3V
(2)
V
-0.3
NOTES:
5648 tbl 04
V IL
Input Low Voltage
(1)
____
0.8
V
1. This is the parameter T A . This is the "instant on" case temperature.
NOTES:
1. V IL > -1.5V for pulse width less than 10 ns.
2. V TERM must not exceed V DD +0.3V.
5648 tbl 05
Absolute Maximum Ratings (1)
Symbol Rating Commercial
& Industrial
Unit
Capacitance (1)
(T A = +25°C, f = 1.0MH Z )
V TERM (2)
Terminal Voltage
with Respect to
GND
-0.5 to +4.6
V
Symbol
Parameter
Conditions
Max.
Unit
C OUT
T BIAS (3)
Temperature
Under Bias
-55 to +125
o
C
C IN
(2)
Input Capacitance
Output Capacitance
V IN = 0V
V OUT = 0V
9
10
pF
pF
T STG
Storage
Temperature
-65 to +150
o
C
NOTES:
5648 tbl 07
1. These parameters are determined by device characterization, but are not
T JN
Junction Temperature
+150
o
C
production tested.
I OUT
DC Output Current
50
mA
2. C OUT also references C I/O .
NOTES:
5648 tbl 06
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. V TERM must not exceed V DD +0.3V.
3. Ambient Temperature Under DC Bias. No AC Conditions. Chip deselect.
6.42
相关PDF资料
IDT70V9389L6PRF IC SRAM 1.125MBIT 6NS 128TQFP
IDT71016S20YGI IC SRAM 1MBIT 20NS 44SOJ
IDT71024S25TYGI IC SRAM 1MBIT 25NS 32SOJ
IDT71124S20YGI IC SRAM 1MBIT 20NS 32SOJ
IDT71256L35Y/2996 IC SRAM 256KBIT 35NS 28SOJ
IDT71256SA25PZGI IC SRAM 256KBIT 25NS 28TSOP
IDT71321LA20TFG IC SRAM 16KBIT 20NS 64STQFP
IDT71342LA25PFI IC SRAM 32KBIT 25NS 64TQFP
相关代理商/技术参数
IDT70V9369L7PFI8 功能描述:IC SRAM 288KBIT 7NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT70V9369L9PF 功能描述:IC SRAM 288KBIT 9NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT70V9369L9PF8 功能描述:IC SRAM 288KBIT 9NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,异步 存储容量:128K(8K x 16) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x14) 包装:托盘 其它名称:70V25S15PF
IDT70V9369L9PFG 功能描述:IC SRAM 288KBIT 9NS 100TQFP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT70V9369L9PFG8 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 288KBIT 9NS 100TQFP
IDT70V9379L12PRF 功能描述:IC SRAM 576KBIT 12NS 128TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT70V9379L12PRF8 功能描述:IC SRAM 576KBIT 12NS 128TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT70V9379L6PRF 功能描述:IC SRAM 576KBIT 6NS 128TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8